High performance optimized CNFET based current conveyor at 32nm technology node

Author

Imran, Ale ; Hasan, Mohd ; Pable, S.D. ; Akram, M.W.

Author_Institution

Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India

fYear

2010

fDate

17-19 Sept. 2010

Firstpage

324

Lastpage

329

Abstract

This paper presents the design of a wide bandwidth high performance CNFET realization of dual-output second generation current conveyor (CCII±) at 32nm technology node. HSPICE simulation shows that voltage and current bandwidths in excess of 22GHz are obtained, thus making the module quite suitable for applications in the microwave range of frequencies. Besides, the circuit is able to operate at reduced power supply of ±0.9V and presents desirable port resistances. The variation of bandwidth and port resistances against number of CNT in the channel has also been investigated.

Keywords

SPICE; carbon nanotubes; current conveyors; field effect transistors; semiconductor device models; CCII; CNFET; HSPICE simulation; current bandwidth; second generation current conveyor; size 32 nm; voltage bnadwidth; Bandwidth; CNTFETs; Electron tubes; Impedance; Microwave filters; Resistance; Carbon Nanotube Field Effect Transistor; Current mode; Dual Output Current Convey or; Nano-electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Communication Technology (ICCCT), 2010 International Conference on

Conference_Location

Allahabad, Uttar Pradesh

Print_ISBN

978-1-4244-9033-2

Type

conf

DOI

10.1109/ICCCT.2010.5640522

Filename

5640522