• DocumentCode
    316071
  • Title

    Comparison of main models for generation-recombination space-charge current in abrupt p-n junction

  • Author

    Gaci, A. ; Maxim, A. ; Ahmadpanah, M. ; Andreu, D. ; Boucher, J.

  • Author_Institution
    Lab. d´´Electron., ENSEEIHT, Toulouse, France
  • Volume
    1
  • fYear
    1997
  • fDate
    14-17 Sep 1997
  • Firstpage
    253
  • Abstract
    The principal approaches of modelling the generation-recombination current in the space-charge region are compared in the case of an abrupt p-n junction submitted to small bias voltages. It is shown that it is possible to model this parameter without any need to know the x-variation of the potential in the space-charge region. The results obtained by our model are in good agreement with those of the “exact model”
  • Keywords
    electron-hole recombination; p-n junctions; space charge; abrupt p-n junction; generation-recombination space-charge current; model; Charge carrier processes; Current density; Equations; Kinetic theory; P-n junctions; Radiative recombination; Silicon; Spontaneous emission; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625235
  • Filename
    625235