Performance analysis of SiGerC HBT

This article shows the improvement in the performance of SiGe HBT by the incorporation of low carbon concentration. Addition of carbon into the base (SiGe) region of HBT can extensively suppress the boron out diffusion caused by device processing e.g. annealing, implantation and epitaxial growth. Here carbon is incorporated uniformly, by epitaxial growth in base at upper side, the substitutional sites and define it is by couple carbon atom and Si point defect. SiGe:C HBT reveals excellent static parameters above the performance of modern SiGe HBT. Carbon also enhances the high frequency performance. Substitutional carbon incorporation is decreasing as temperature or total C concentration is increasing leading to defects in the epitaxial and degradation of the base current hence increasing the gain of the device.