DocumentCode
316072
Title
Non-quasi-static modeling of bipolar transistors for CAD applications
Author
Rinaldi, N.F.
Author_Institution
Dipt. di Ingegneria Elettronica, Naples Univ., Italy
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
261
Abstract
A general analytical treatment of small-signal operation of bipolar transistors is presented, which applies to nonuniformly doped devices and arbitrary injection levels. The analysis provides a systematic method for deriving all previous small-signal models, as well as new models. Comparison between different models is also presented, and the impact of high-injection effects on device performance is discussed
Keywords
CAD; bipolar transistors; electronic engineering computing; semiconductor device models; CAD applications; arbitrary injection levels; bipolar transistors; device performance; high-injection effects; non-quasi-static modeling; nonuniformly doped devices; small-signal operation; Bipolar transistors; Councils; Doping profiles; Electron mobility; Equations; Microelectronics; Performance analysis; Semiconductor process modeling; Signal analysis; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625238
Filename
625238
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