Title :
On the extraction of the threshold voltage of MOSFETs
Author :
Ortiz-Conde, A. ; Fernandes, E. Couveia ; Liou, J.J. ; Hassan, Md Rofiqul ; Sánchez, F. J García ; De Mercato, G. ; Wong, W. ; Castillo, O. Montilla
Author_Institution :
Dept. de Electron., Simon Bolivar Univ., Caracas, Venezuela
Abstract :
A new method to extract the threshold voltage and the effective channel of MOSFETs, which is insensitive to the series resistances, is presented. This method, which is weakly dependent on the mobility model, is tested in circuit simulator and measurement environments
Keywords :
MOSFET; electric potential; semiconductor device models; MOSFETs; effective channel extraction; mobility model; threshold voltage extraction; Circuit simulation; Current measurement; Educational institutions; Electrical resistance measurement; Low pass filters; MOSFETs; Measurement errors; Threshold voltage; Time division multiplexing; Transconductance;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625250
