Title :
Photoresponse of InGaAsP-based p-doped quantum well infrared photodetectors
Author :
Tadic, Marko ; Jelen, Christopher ; Slivken, Steven ; Razeghi, M.
Author_Institution :
Fac. of Electr. Eng., Belgrade Univ., Serbia
Abstract :
Absorption in p-doped quantum well infrared photodetectors (QWIPs) based on InGaAsP alloys is measured and theoretically explained. It is noticed that the small spin-orbit splitting in InGaAsP alloys considerably affects the absorption spectrum. Very good agreement between the experimental and theoretical results is obtained, in respect of both the position of the peak of the responsivity and the cut-off wavelength. The experimental data displays the absorption in the 3-5 μm window, while the calculation predicts two peaks, for one of them the split-off band being responsible
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum wells; 3 to 5 micrometre; InGaAsP; QWIP; absorption spectrum; cut-off wavelength; p-doped quantum well infrared photodetectors; responsivity; spin-orbit splitting; split-off band; Displays; Effective mass; Electromagnetic wave absorption; Electrons; Gallium arsenide; Photodetectors; Quantum mechanics; USA Councils; Virtual colonoscopy; Wavelength measurement;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625258
