Photoresponse of InGaAsP-based p-doped quantum well infrared photodetectors

Author

Tadic, Marko ; Jelen, Christopher ; Slivken, Steven ; Razeghi, M.

Author_Institution

Fac. of Electr. Eng., Belgrade Univ., Serbia

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

315

Abstract

Absorption in p-doped quantum well infrared photodetectors (QWIPs) based on InGaAsP alloys is measured and theoretically explained. It is noticed that the small spin-orbit splitting in InGaAsP alloys considerably affects the absorption spectrum. Very good agreement between the experimental and theoretical results is obtained, in respect of both the position of the peak of the responsivity and the cut-off wavelength. The experimental data displays the absorption in the 3-5 μm window, while the calculation predicts two peaks, for one of them the split-off band being responsible

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum wells; 3 to 5 micrometre; InGaAsP; QWIP; absorption spectrum; cut-off wavelength; p-doped quantum well infrared photodetectors; responsivity; spin-orbit splitting; split-off band; Displays; Effective mass; Electromagnetic wave absorption; Electrons; Gallium arsenide; Photodetectors; Quantum mechanics; USA Councils; Virtual colonoscopy; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625258

Filename

625258