DocumentCode
316085
Title
An analytical continuous model of a fully depleted SOI MOSFET applicable for CAD
Author
Jurczak, M. ; Jakubowski, A.
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
351
Abstract
This paper describes a new continuous analytical model of fully depleted SOI MOSFET valid for the whole range of bias conditions. The physical descriptions of the subthreshold and the above threshold regions are joined together by an empirical function which describes the moderate inversion region
Keywords
CAD; MOSFET; electronic engineering computing; inversion layers; semiconductor device models; silicon-on-insulator; CAD application; Si; above threshold region; analytical continuous model; bias condition; empirical function; fully depleted SOI MOSFET; moderate inversion region; subthreshold region; Analytical models; Capacitance; Circuit simulation; Computational modeling; Ink; MOSFET circuits; Region 3; Silicon; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625270
Filename
625270
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