Influence of the temperature on the equivalent noise resistance of HEMT´s at microwave frequencies

Author

Prima, F. Ni ; Caddemi, A. ; Sannino, M.

Author_Institution

Dipt. di Ingegneria Elettrica, Palermo Univ., Italy

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

361

Abstract

This paper is focused on the performance of the noise resistance R _n of HEMT´s at microwave frequencies as a function of temperature. A sensitivity analysis has been performed on several noisy circuit models of low-noise devices that we had previously characterized in terms of scattering and noise parameters. Such a study has been aimed at pointing out the role played by either the electrical elements and the noise temperatures of the resistors of the equivalent circuit on the typically observed U-shaped behavior of R_n

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; sensitivity analysis; HEMT; U-shaped behavior; electrical elements; equivalent circuit; equivalent noise resistance; low-noise devices; microwave frequencies; noisy circuit models; scattering parameters; sensitivity analysis; temperature dependence; Acoustic reflection; Circuit noise; HEMTs; Microwave frequencies; Noise figure; Noise shaping; PHEMTs; Scattering parameters; Sensitivity analysis; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625272

Filename

625272