Thermal effects and electro-thermal modeling in power bipolar transistors

Author

Breglio, G. ; Pica, S. ; Spirito, P.

Author_Institution

Dipt. di Ingegneria Elettronica, Naples Univ., Italy

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

383

Abstract

Dynamic electro-thermal instabilities of power devices are presented and discussed. These analyses have been made with the aim of examining hot spot onset in power cellular transistors. The temperature distributions are obtained by means of a 3D electro-thermal simulator, and the numerical results are compared with experimental dynamic thermal maps, detected by direct IR radiometric measurements with high spatial and high time resolution. By analyzing both experimental and numerical electrothermal instabilities on power cellular BJTs, we have found that the time dependent thermal distribution is a function of the device under simulation (DUS) layout and also that it is a strong function of the single cell temperature dependent current gain and the thermal interaction between the neighbouring cells

Keywords

infrared imaging; power bipolar transistors; semiconductor device models; semiconductor device reliability; temperature distribution; thermal stability; 3D electro-thermal simulator; IR radiometric measurements; cell thermal interaction; device under simulation layout; dynamic electro-thermal instabilities; dynamic thermal maps; electro-thermal modeling; high spatial resolution; high time resolution; hot spot onset; power bipolar transistors; power cellular BJTs; temperature dependent current gain; temperature distributions; thermal effects; time dependent thermal distribution; Bipolar transistors; Equations; Insulated gate bipolar transistors; Metallization; Resistors; Steady-state; Temperature dependence; Temperature distribution; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625275

Filename

625275