Optimization of boron groove diffusion for double sided buried contact silicon solar cells

The double sided buried contact (DSBC) silicon solar cell is very sensitive to boron diffusion into the rear grooves. This dependence is due to the rear floating junction and the effect of boron on the minority carrier lifetime of a device. To compensate for the rear junction without the deleterious effect of boron on the device performance, three different boron diffusion conditions were investigated. These are, light (113-136 Ω/□), medium (45-72 Ω/□), and heavy (14-41 Ω/□). Each condition corresponds to a different set of electrical output parameters, especially the open circuit voltage, fill factor and the ideality factor. The medium condition has been found to give the best open circuit voltage (671 mV) and fill factor of greater than 0.76. This paper discusses the experimental work done on boron rear groove diffusion and the corresponding results