• DocumentCode
    3161780
  • Title

    Reliability Assessment for Cu/Low-k Structure based on Bump Shear Modeling and Simulation Method

  • Author

    Che, F.X. ; Zhu, W.H.

  • Author_Institution
    United Test & Assembly Center Ltd. (UTAC), Singapore
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    27
  • Lastpage
    31
  • Abstract
    Bump shear is widely used to characterize interface strength of Cu/low-k structure. In this work, the blanket low-k structure was used to evaluate the reliability and strength of Cu/low-k structure using finite element modeling technique. The objectives of this work are to determine the critical stress parameters for low-k interfaces with different Cu/low-k structures for understanding the failure mechanism and to improve the low-k structure reliability by optimizing the some parameters. In this paper, the comprehensive parametric study was conducted including 3 different low-k structures, different shear ram height, high Pb solder vs. Pb-free solder, different UBM thicknesses, blok layer modulus effect. The simulation findings can be summarized as follows: The shear force decreases with shear ram height. The critical stress decreases with the number of layer of low-k structure. Higher shear force occurs for SnAg solder bump than SnPb one. Reducing UBM thickness can help to improve the low-k structure reliability.
  • Keywords
    copper; finite element analysis; reliability; solders; stress analysis; Cu; Cu/low-k structure; Pb-free solder; UBM thicknesses; blok layer modulus; bump shear modeling; critical stress parameters; finite element modeling; high Pb solder; interface strength; low-k structure reliability; reliability assessment; simulation method; Copper; Failure analysis; Finite element methods; Integrated circuit interconnections; Integrated circuit reliability; Packaging; Parametric study; Stress; Testing; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-1323-2
  • Electronic_ISBN
    978-1-4244-1323-2
  • Type

    conf

  • DOI
    10.1109/EPTC.2007.4469781
  • Filename
    4469781