Title :
Influence of baking conditions of doped spin-on glass sources on the formation of laser assisted selective emitters
Author :
Ventura, L. ; Schunck, J.P. ; Muller, J.C. ; Barthe, S. ; Vetrella, U. Besi ; Pirozzi, L. ; Salza, E.
Author_Institution :
Lab. PHASE, CNRS, Strasbourg, France
Abstract :
Our purpose here is to combine the rapid thermal annealing (RTA) of doped spin-on glass films SOG layers and pulsed laser assisted treatments (Nd:YAG) in order to form selective emitters. The phosphorus doped SOG films were first rapid thermal annealed at different temperatures before laser irradiation in defined areas. For a given fluence and repetition rate, the sheet resistance values are seen to strongly depend on the baking temperature. An optimal processing temperature of 850°C has been found allowing laser treated area with low sheet resistance values as low has 20 Ω/□ and low doped area (100 Ω/□) on the untreated region. Solar cells with selective emitters made by this technique have shown higher open circuit voltage than for reference cells
Keywords :
electric resistance; elemental semiconductors; laser beam applications; neodymium; phosphorus; rapid thermal annealing; semiconductor materials; silicon; solar cells; solid lasers; 850 C; Nd:YAG treatment; Si:P; baking conditions; doped spin-on glass sources; higher open circuit voltage; laser assisted selective emitters; laser irradiation; optimal processing temperature; phosphorus doped SOG films; pulsed laser assisted treatments; rapid thermal annealing; sheet resistance; spin-on glass films; Crystallization; Doping; Glass; Performance evaluation; Photovoltaic cells; Rapid thermal annealing; Silicon; Surface emitting lasers; Surface resistance; Temperature dependence;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564072
