High Power, High Linearity and Low-Noise Hybrid RF Amplifiers Based on GaN HEMTs

Author

Khalil, Ibrahim ; Rudolph, Matthias ; Liero, Armin ; Neumann, Mark ; Heinrich, Wolfgang

Author_Institution

Ferdinand-Braun-Inst., Berlin

fYear

2009

fDate

16-18 March 2009

Firstpage

1

Lastpage

4

Abstract

This paper details the potential of GaN HEMT technology for RF high power amplifiers (HPA), low noise amplifiers (LNA) and high linearity amplifiers with practical application examples. Large GaN HEMT powerbars are measured in a 50-iquest-system at 2 GHz. Measurements show excellent characteristics in terms of power, linearity and noise. This combination of high power and low noise performance allows the realization of highly linear LNAs, which could significantly reduce protection and filter efforts at receiver inputs.

Keywords

III-V semiconductors; gallium compounds; low noise amplifiers; power HEMT; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; GaN; HEMT; HEMT powerbars; LNA; RF high power amplifiers; frequency 2 GHz; high linearity amplifiers; low noise amplifiers; Gallium nitride; HEMTs; High power amplifiers; Linearity; Low-noise amplifiers; MODFETs; Noise measurement; Power measurement; Radio frequency; Radiofrequency amplifiers; Amplifier distortion; Amplifier noise; Cross modulation distortion; Distortion; Intermodulation distortion; Microwave power FET amplifiers; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009 German

Conference_Location

Munich

Print_ISBN

978-3-9812668-0-1

Electronic_ISBN

978-3-8007-3150-3

Type

conf

DOI

10.1109/GEMIC.2009.4815890

Filename

4815890