• DocumentCode
    3162629
  • Title

    Design of Class F-1 Power Amplifier Using GaN pHEMT for Industrial Applications

  • Author

    Al Tanany, Ahmed ; Sayed, Ahmed ; Boeck, Georg

  • Author_Institution
    Microwave Eng. Lab., Berlin Inst. of Technol., Berlin
  • fYear
    2009
  • fDate
    16-18 March 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This work presents a Class F-1 power amplifier (PA) operating at 2.35 GHz. An output power of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was measured to be 60.8% (PAE = 55.7 %). The power amplifier was implemented using GaN pHEMT. The realization of the optimum load resonator was designed by a microstrip resonator, for the first four harmonics. The resonator achieves an optimum load for the transistor at the fundamental frequency.
  • Keywords
    gallium compounds; high electron mobility transistors; microstrip resonators; power amplifiers; wide band gap semiconductors; GaN; class F-1 power amplifier; efficiency 60.8 percent; first four harmonics; frequency 2.35 GHz; industrial applications; maximum drain efficiency; microstrip resonator; optimum load resonator; pHEMT; Circuits; Gallium nitride; High power amplifiers; Microstrip resonators; Microwave amplifiers; PHEMTs; Power amplifiers; Power generation; Switches; Zero voltage switching; Class F-1; GaN HEMT; High Efficiency; Power Amplifier; Resonator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009 German
  • Conference_Location
    Munich
  • Print_ISBN
    978-3-9812668-0-1
  • Electronic_ISBN
    978-3-8007-3150-3
  • Type

    conf

  • DOI
    10.1109/GEMIC.2009.4815893
  • Filename
    4815893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3162629