DocumentCode
3162769
Title
Diagnostic of silicon carbide surge arresters
Author
Kanashiro, Arnaldo ; Tatizawa, Hédio ; Zanotti, Milton, Jr. ; Obase, Paulo F. ; Bacega, Wilson R.
Author_Institution
Inst. of Electrotechnics & Energy, Univ. of Sao Paulo, São Paulo, Brazil
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
365
Lastpage
368
Abstract
The gapped silicon carbide (SiC) surge arresters are being removed from the operating system of the utilities, however, a large number are still installed in the power system. Therefore, it is very important to give priority to SiC surge arresters that are more degraded in order to replace them by the zinc oxide (ZnO) ones. This work shows that the leakage current measurement, normally used as diagnostic technique for the ZnO surge arresters, can also provide important information concerning the condition of the SiC surge arresters. Results from the laboratory tests and substation measurements are presented.
Keywords
arresters; leakage currents; silicon compounds; zinc compounds; SiC; ZnO; leakage current; power system; silicon carbide surge arresters; zinc oxide; Arresters; Current measurement; Leakage current; Silicon carbide; Substations; Surges;
fLanguage
English
Publisher
ieee
Conference_Titel
High Voltage Engineering and Application (ICHVE), 2010 International Conference on
Conference_Location
New Orleans, LA
Print_ISBN
978-1-4244-8283-2
Type
conf
DOI
10.1109/ICHVE.2010.5640750
Filename
5640750
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