• DocumentCode
    3162769
  • Title

    Diagnostic of silicon carbide surge arresters

  • Author

    Kanashiro, Arnaldo ; Tatizawa, Hédio ; Zanotti, Milton, Jr. ; Obase, Paulo F. ; Bacega, Wilson R.

  • Author_Institution
    Inst. of Electrotechnics & Energy, Univ. of Sao Paulo, São Paulo, Brazil
  • fYear
    2010
  • fDate
    11-14 Oct. 2010
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    The gapped silicon carbide (SiC) surge arresters are being removed from the operating system of the utilities, however, a large number are still installed in the power system. Therefore, it is very important to give priority to SiC surge arresters that are more degraded in order to replace them by the zinc oxide (ZnO) ones. This work shows that the leakage current measurement, normally used as diagnostic technique for the ZnO surge arresters, can also provide important information concerning the condition of the SiC surge arresters. Results from the laboratory tests and substation measurements are presented.
  • Keywords
    arresters; leakage currents; silicon compounds; zinc compounds; SiC; ZnO; leakage current; power system; silicon carbide surge arresters; zinc oxide; Arresters; Current measurement; Leakage current; Silicon carbide; Substations; Surges;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Voltage Engineering and Application (ICHVE), 2010 International Conference on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-8283-2
  • Type

    conf

  • DOI
    10.1109/ICHVE.2010.5640750
  • Filename
    5640750