DocumentCode
3162913
Title
A Direct Method For Measuring The Gate Oxide Capwi-hnces Of MOSFETS
Author
Allen, Richard A. ; Piña, Cesar A. ; Buehler, Martin G.
Author_Institution
California Institute Of Technology
fYear
1988
fDate
22-23 Feb. 1988
Firstpage
45
Lastpage
48
Keywords
Capacitance; Dielectric materials; Dielectrics and electrical insulation; MOS capacitors; MOSFETs; Measurement techniques; Permittivity; Silicon; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/ICMTS.1988.672927
Filename
672927
Link To Document