DocumentCode :
3163187
Title :
KTN ferroelectric thin-films: Application to the realization of tunable microwave devices
Author :
Laur, Vincent ; Moussavou, Arnaud ; Rousseau, Anthony ; Tanne, Gerard ; Laurent, Paul ; Bouquet, Valerie ; Guilloux-Viry, Maryline ; Huret, Fabrice
Author_Institution :
LEST-UMR CNRS, Brest
fYear :
2006
fDate :
10-15 Sept. 2006
Firstpage :
835
Lastpage :
838
Abstract :
Interdigital capacitors were fabricated on KTa0.5Nb0.5O3/sapphire substrate. Since their measurements demonstrated the high tuning factor of KTNs, we designed and fabricated three distributed phase shifters. To our knowledge, they are the first phase-shifters realized on KTN thin films at microwave frequencies. These circuits present interesting phase-shifts, but their figures of merit are weakened by high KTN dielectric losses mainly responsible for the observed insertion losses; thus, in a near future our investigations will mainly focused on this issue
Keywords :
capacitors; dielectric losses; ferroelectric thin films; microwave devices; phase shifters; potassium compounds; sapphire; tantalum compounds; KTN ferroelectric thin-films; KTa0.5Nb0.5O3-Al2O 3; dielectric loss; distributed phase shifters; ferroelectric materials; insertion loss; interdigital capacitors; microwave frequencies; phase-shifts; tunable microwave devices; Capacitors; Dielectric losses; Dielectric measurements; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Microwave devices; Niobium; Thin films; Tunable circuits and devices; Ferroelectric materials; Thin films; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
Type :
conf
DOI :
10.1109/EUMC.2006.281049
Filename :
4057948
Link To Document :
بازگشت