Title :
High temperature physical modeling and verification of 4H-SiC lateral JFET device
Author :
Zhong, Xueqian ; Wang, Tao ; Guo, Qing ; Sheng, Kuang
Author_Institution :
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Silicon Carbide (SiC) lateral JFET (LJFET) has drawn significant attentions due to its excellent performance in high-temperature and high-frequency electronics applications. This paper establishes a comprehensive physical model, including both DC and AC characteristics, for 4H-SiC lateral JFET at room temperature and high temperature (300°C). Finite element numerical simulation and experimental measurement are carried out to verify the validity of the established physical model. Good agreements have been achieved among these three sets of results. For the first time, the modeling work studied the detailed operating mechanism and provided valuable design guidelines for SiC LJFET device at temperature as high as 300°C.
Keywords :
finite element analysis; high-temperature electronics; junction gate field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC lateral JFET device; AC characteristic; DC characteristic; SiC; finite element numerical simulation; high temperature physical modeling; silicon carbide; temperature 300 C; Capacitance; Doping; Junctions; Logic gates; Numerical models; Silicon carbide; Temperature measurement; Silicon Carbide(SiC); high temperature; lateral juction field-effect transistor(LJFET); physical modeling;
Conference_Titel :
Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC), 2011 2nd International Conference on
Conference_Location :
Deng Leng
Print_ISBN :
978-1-4577-0535-9
DOI :
10.1109/AIMSEC.2011.6010044