DocumentCode
3163441
Title
Determination Of The HF Model Parameters Of The MOS Transistor By Using Standard Dropin Test Structures
Author
Vandeloo, P. ; Sansen, W.
Author_Institution
Imec
fYear
1988
fDate
22-23 Feb. 1988
Firstpage
97
Lastpage
101
Keywords
Capacitance; Circuit testing; Design engineering; Differential equations; Doping; Frequency measurement; Hafnium; MOSFETs; Measurement standards; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/ICMTS.1988.672942
Filename
672942
Link To Document