Title :
Determination Of The HF Model Parameters Of The MOS Transistor By Using Standard Dropin Test Structures
Author :
Vandeloo, P. ; Sansen, W.
Author_Institution :
Imec
Keywords :
Capacitance; Circuit testing; Design engineering; Differential equations; Doping; Frequency measurement; Hafnium; MOSFETs; Measurement standards; Transmission line measurements;
Conference_Titel :
Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/ICMTS.1988.672942
