Title :
Misra - Invited Speaker
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC
Abstract :
In recent years, high-k dielectrics have been successfully implemented in CMOS logic devices wherein their use has led to lower leakages, better gate control and in turn continued downscaling. While high-k dielectrics materials and process flows are continuously being fine tuned for logic devices, their applications in other non-CMOS insertion are also rapidly emerging. In this talk, we discussed our recent work on exploring high-k dielectrics for various new applications. We have realized high-k dielectrics in non-volatile memories and have exploited barrier engineering to achieve asymmetry in tunneling rates. In the area of nanocrystal FLASH memories, we have investigated ALD nanoparticle formation as a function of the high-k dielectric and have shown a strong dependence on the surface. We have also investigated these high-k dielectric stacks for improving the performance of molecular memories. We also presented the advantages of using high-k dielectrics in power semiconductor applications such as SiC MOSFETs. Finally, we summarized the outlook of some emerging nanotechnologies which can benefit from high-k dielectrics.
Keywords :
dielectric materials; flash memories; logic devices; random-access storage; CMOS logic device; FLASH memories; barrier engineering; gate control; high-k dielectric stacks; high-k dielectrics materials; molecular memories; nanoparticle formation; nonvolatile memories; power semiconductor application; process flow; CMOS logic circuits; Flash memory; High K dielectric materials; High-K gate dielectrics; Logic devices; MOSFETs; Nanocrystals; Nonvolatile memory; Silicon carbide; Tunneling;
Conference_Titel :
Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-3551-7
DOI :
10.1109/WMED.2009.4816131