DocumentCode
3163759
Title
High aspect pattern fabrication by nano imprint lithography using fine diamond mold
Author
Hirai, Y. ; Yoshida, S. ; Takagi, S. ; Tanaka, Y. ; Yabe, H. ; Sasaki, K. ; Sumitani, H.
Author_Institution
Coll. of Eng., Osaka Prefecture Univ., Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
26
Lastpage
27
Abstract
Nano imprint lithography is an attractive fine lithographic method to obtain nano patterns by using low cost process and materials., Various applications have been demonstrated to utilize this fine method. One of the advantages of nano imprint lithography is that a wet development process is not required, which sometimes causes sticking errors by surface tension during wet development process. On the other hand, there is no fear of such defects by imprint lithography because a resist is mechanically deformed and released. We have demonstrated high aspect ratio pattern fabrication as high as 6.0 with 200nm in line width. But the mold is fabricated using thin Si substrate and anisotropic wet chemical etching, which cannot fabricate voluntary patterns by crystalline axis dependence.
Keywords
nanolithography; pattern formation; anisotropic wet chemical etching; fine diamond mold; high aspect pattern fabrication; nanoimprint lithography; thin Si substrate; Costs; Educational institutions; Fabrication; Lithography; Optical devices; Polymers; Research and development; Resists; Substrates; Surface tension;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178526
Filename
1178526
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