• DocumentCode
    3163871
  • Title

    Freestanding carbon nanotube bridge grown by hot-filament chemical vapor deposition

  • Author

    Miyashita, H. ; Ono, T. ; Esashi, M.

  • Author_Institution
    Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2002
  • fDate
    6-8 Nov. 2002
  • Firstpage
    36
  • Lastpage
    37
  • Abstract
    We had reported that the growth of carbon nanotubes (CNT) was enhanced by electric field with hot-filament chemical vapor deposition (HF-CVD), and SPM probe with an individual CNT was successfully fabricated. This paper describes the growth technique of a freestanding CNT between two opposed silicon electrodes with the electric field enhanced method.
  • Keywords
    carbon nanotubes; chemical vapour deposition; electric field effects; C; Si; electric field enhanced growth; freestanding carbon nanotube bridge; hot-filament chemical vapor deposition; silicon electrode; Bridges; Carbon nanotubes; Chemical vapor deposition; Conductivity; Electrodes; Etching; Iron; Nickel; Scanning probe microscopy; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-031-3
  • Type

    conf

  • DOI
    10.1109/IMNC.2002.1178531
  • Filename
    1178531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3163871