Title :
Design of a Novel Capacitorless DRAM Cell with Enhanced Retention Performance
Author :
Wang, Peng-Fei ; Gong, Yi ; Ding, Shi-Jin ; Zhang, David Wei ; Zhang, Shi-Li
Author_Institution :
Oriental Semicond. Co., Ltd., Suzhou
Abstract :
A novel capacitorless DRAM cell with enhanced retention performance is investigated. The write / read mechanisms, speed, retention performance are studied with numerical simulations. Further, the manufacturing method of this device is briefly discussed.
Keywords :
DRAM chips; capacitorless DRAM cell; enhanced retention performance; numerical simulations; write-read mechanisms; Capacitors; Leakage current; MOS devices; Nonvolatile memory; P-i-n diodes; P-n junctions; Random access memory; Semiconductor diodes; Threshold voltage; Transistors;
Conference_Titel :
Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-3551-7
Electronic_ISBN :
978-1-4244-3552-4
DOI :
10.1109/WMED.2009.4816144
