• DocumentCode
    3163989
  • Title

    Fabrication and I-V characterization of metal/SAM/metal devices

  • Author

    Majima, Y. ; Sasao, K. ; Azuma, Y. ; Miyamoto, Y.

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • fYear
    2002
  • fDate
    6-8 Nov. 2002
  • Firstpage
    48
  • Abstract
    We fabricate Au/SAM/Au devices by using an EB lithography and demonstrate the current-voltage (I/sub DS/-V/sub DS/) characteristics.
  • Keywords
    gold; metal-semiconductor-metal structures; molecular electronics; monolayers; organic semiconductors; self-assembly; Au; EB lithography; I-V characterization; current-voltage characteristics; fabrication; metal/SAM/metal devices; Electrodes; Fabrication; Gold; Lithography; OFETs; Scanning electron microscopy; Self-assembly; Transconductance; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-031-3
  • Type

    conf

  • DOI
    10.1109/IMNC.2002.1178537
  • Filename
    1178537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3163989