Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems

Author

Chen, H.L. ; Fan, W. ; Wang, T.J. ; Ko, F.H. ; Hsieh, C.I.

Author_Institution

Nat. Nano Device Lab, Hsinchu, Taiwan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

62

Lastpage

63

Abstract

In the recent ITRS roadmap, ArF and F/sub 2/ excimer laser lithographies combining with resolution enhancement techniques would lead IC technologies to generations of 90 nm and 65 nm, respectively. For increasing resolution of optical lithography, expose systems with high numerical aperture (NA) are essential. The efficiency of the conventional single-layer BARC structure will degrade as the incident angle increased. It is due to the reflectance at resist/BARC interface increases in the large incident-angle regime. Here we demonstrate a multilayer bottom antireflective coating (BARC) layer for high-NA exposure systems in ArF and F/sub 2/ lithographies.

Keywords

antireflection coatings; optical multilayers; photoresists; ultraviolet lithography; 65 nm; 90 nm; ArF; DUV exposure system; F/sub 2/; IC technology; excimer laser lithography; modified illumination; multilayer bottom antireflective coating; numerical aperture; optical lithography; resist/BARC interface; resolution enhancement technique; Apertures; Coatings; Electrooptic devices; Lighting; Lithography; Nonhomogeneous media; Optical films; Reflectivity; Resists; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178544

Filename

1178544