Dielectric properties and low temperature relaxation studies of doped TGS single crystals

Several kinds of dopants (alanine, LiVO₃ and valine) doped TGS were grown from solution by slow cooling method. Temperature dependence dielectric spectra were measured to study the variation of transition temperature, K_max and room temperature dielectric constant depending on the dopants. Furthermore, several pieces were selected to investigate the positional inhomogeneities of the same sample. D-E hysteresis loop measurements were done to check for the internal bias field (E_b). We could not get a high figure of merit (p/K) in valine doped TGS because of low temperature relaxation around -10°C, although it has three times higher pyroelectric coefficient than that of alanine at transition temperature (T_C)