• DocumentCode
    3164435
  • Title

    Enhancement of EUV reflective multilayer properties by the insertion of Ru barrier layer

  • Author

    Seung Yoon Lee ; Tae Geun Kim ; Hyung Jun Kim ; Jinho Ahn

  • Author_Institution
    Div. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
  • fYear
    2002
  • fDate
    6-8 Nov. 2002
  • Firstpage
    102
  • Lastpage
    103
  • Abstract
    Although there are several ways to ensure the high throughput of EUVL process, increasing the EUV reflectivity of the multilayer mirror might be the simplest but still efficient solution for that. Many works to enhance the multilayer reflectivity have been reported and a good deal of them is related to the addition of barrier layers, such as B/sub 4/C and C into Mo/Si multilayer stack. Also, there was a try of sub-multilayering of Mo with Ru insertion to reduce the multilayer stress. In our experiment, we inserted Ru into Mo/Si multilayer to improve the optical property.
  • Keywords
    mirrors; molybdenum; optical multilayers; reflectivity; ruthenium; silicon; ultraviolet lithography; EUV lithography; Mo-Ru-Si; Mo/Si multilayer mirror; Ru barrier layer; optical properties; reflectivity; Materials science and technology; Mirrors; Nonhomogeneous media; Occupational stress; Optical materials; Reflectivity; Stacking; Throughput; Ultraviolet sources; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-031-3
  • Type

    conf

  • DOI
    10.1109/IMNC.2002.1178564
  • Filename
    1178564