DocumentCode
3164435
Title
Enhancement of EUV reflective multilayer properties by the insertion of Ru barrier layer
Author
Seung Yoon Lee ; Tae Geun Kim ; Hyung Jun Kim ; Jinho Ahn
Author_Institution
Div. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
102
Lastpage
103
Abstract
Although there are several ways to ensure the high throughput of EUVL process, increasing the EUV reflectivity of the multilayer mirror might be the simplest but still efficient solution for that. Many works to enhance the multilayer reflectivity have been reported and a good deal of them is related to the addition of barrier layers, such as B/sub 4/C and C into Mo/Si multilayer stack. Also, there was a try of sub-multilayering of Mo with Ru insertion to reduce the multilayer stress. In our experiment, we inserted Ru into Mo/Si multilayer to improve the optical property.
Keywords
mirrors; molybdenum; optical multilayers; reflectivity; ruthenium; silicon; ultraviolet lithography; EUV lithography; Mo-Ru-Si; Mo/Si multilayer mirror; Ru barrier layer; optical properties; reflectivity; Materials science and technology; Mirrors; Nonhomogeneous media; Occupational stress; Optical materials; Reflectivity; Stacking; Throughput; Ultraviolet sources; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178564
Filename
1178564
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