Mechanism and modeling of ring pattern formation for electron beam exposure on zwitterresist

The first application of simultaneous patterning technology on positive and negative tones in lithography has been reported previously. In a further study, we find that the relationship between the applied doses and the obtained ring width does not exhibit linearity, irrespective of the design radius in the center dot. The observation suggests that the assumption of only using the scattering effect in explaining the ring width needs to be improved. At higher electron doses, the heating effect from center area also plays important role.