• DocumentCode
    3164585
  • Title

    Estimation of optimum EPL mask biases in consideration of Coulomb beam blur

  • Author

    Kobinata, H. ; Yamada, Y. ; Tamura, T. ; Fujii, K. ; Narihiro, M. ; Ochiai, Y.

  • Author_Institution
    ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
  • fYear
    2002
  • fDate
    6-8 Nov. 2002
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    The authors discuss the dependence of the beam blur on the pattern density and estimate the amount of mask bias required to correct the proximity effect in consideration of the beam blur difference in electron-beam projection lithography.
  • Keywords
    electron beam focusing; electron beam lithography; proximity effect (lithography); Coulomb beam blur; electron-beam projection lithography; optimum EPL mask bias; pattern density; proximity effect; Acceleration; Current density; Lithography; National electric code; Page description languages; Particle beams; Proximity effect; Silicon; Ultra large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-031-3
  • Type

    conf

  • DOI
    10.1109/IMNC.2002.1178570
  • Filename
    1178570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3164585