A 310 k pixel bipolar imager (BASIS)

Author

Tanaka, N. ; Hashimoto, S. ; Shinohara, M. ; Sugawa, S. ; Morishita, M. ; Matsumoto, S. ; Nakamura, Y. ; Ohmi, T.

Author_Institution

Canon Inc., Hiratsuka, Japan

fYear

1989

fDate

15-17 Feb. 1989

Firstpage

96

Lastpage

97

Abstract

A bipolar imager with an amplification function in each pixel has been developed using BiCMOS technology. The imager, which stores photocarriers in the base regions of the bipolar transistor pixels, is called the base-stored image sensor (BASIS). BASIS-type devices have been faced with three problems: (1) a reset transistor is needed in each pixel to initialize base voltage; (2) nonuniformity of offset voltage appears as fixed pattern noise; and (3) blooming is induced by intense light. Effective methods of dealing with these problems have been found. A BASIS imager with 310 k pixels in a 2/3-in optical format is described. The device specifications and characteristics of the imager are summarized.<>

Keywords

BIMOS integrated circuits; amplification; image sensors; 0.6667 in; 2/3-in optical format; 31*10/sup 4/ pixel; BASIS-type devices; BiCMOS technology; amplification function; base-stored image sensor; bipolar imager; bipolar transistor pixels; photocarrier storage; Apertures; BiCMOS integrated circuits; Bipolar transistors; Capacitors; Circuit noise; Image sensors; Optical noise; Pixel; Signal to noise ratio; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/ISSCC.1989.48197

Filename

48197