DocumentCode
3164647
Title
Multiple-step electron charging in Si quantum-dot floating gate MOS memories
Author
Ikeda, M. ; Shimizu, Y. ; Murakami, H. ; Miyazaki, S.
Author_Institution
Graduate Sch. of Eng., Hiroshima Univ., Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
116
Lastpage
117
Abstract
The multiple-step electron charging to a Si quantum dot floating gate in MOSFETs has been demonstrated at room temperature. The metastable states in electron charging at a constant gate bias are attributable to the rearrangement of charge distribution in the Si quantum dot floating gate due to the Coulomb interaction among the charged quantum dots.
Keywords
MOSFET; elemental semiconductors; nanoelectronics; semiconductor quantum dots; semiconductor storage; silicon; Coulomb interaction; MOS memories; MOSFET; Si; Si quantum dot floating gate; charge distribution rearrangement; charged quantum dots; constant gate bias; metastable states; multiple-step electron charging; Current measurement; Electrons; Fabrication; MOSFETs; Metastasis; Nonvolatile memory; Quantum dots; Silicon; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178571
Filename
1178571
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