Fabrication of flat electrodes with nano-gaps using cluster ion beams

Recently there has been of considerable interest in developing molecular electronic devices by utilizing the ability of self-assembly to form a fixed structure. In order to evaluate electronic properties of molecular devices, it is required to make flat electrodes in which the surface of electrodes is almost parallel to that of insulating substrate, since steps between electrodes and substrates prevent from constructing a self-assembly nanostructure. We herein report fabrication processes of flat electrodes whose spacing are about 100 nm, using electron beam lithography and argon gas-cluster ion beams.