Metastable atom lithography: a potential candidate of the NGL and the first results at the NIMS

Author

Ju, Xinglong ; Kurahashi, M. ; Suzuki, T. ; Yamauchi, Y.

Author_Institution

Nat. Inst. for Mater. Sci., Ibaraki, Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

166

Abstract

In the past decade, many efforts have been made to developing the next generation lithography (NGL) for patterning silicon surfaces with sub-100 nm resolution. Here we report a new approach to pattern gold surfaces on muscovite mica by using a metastable helium (He*) atom beam and octanethiol and dodecanethiole (DDT) self-assembled monolayer. The SEM image of the pattern is shown.

Keywords

atom-surface impact; gold; mica; nanolithography; pattern formation; scanning electron microscopy; silicon; 100 nm; Au; Au surface patterning; SEM image; Si; Si surface patterning; dodecanethiole; metastable He* atom beam; metastable atom lithography; muscovite mica; next generation lithography; octanethiol; self-assembled monolayer; Atomic beams; Gold; Helium; Lithography; Materials science and technology; Metastasis; Rough surfaces; Silicon; Surface cleaning; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178596

Filename

1178596

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3165189