Extracting the HBT series parasitics under active bias conditions

Author

Wasige, Edward

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ.

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1267

Lastpage

1270

Abstract

A method for directly determining the series access impedances of heterojunction bipolar transistors (HBT) is presented. Unlike previous methods which use either specific bias conditions (open-collector regime) at high base current densities or special test-structures, this method determines the impedances under normal active bias conditions. Reliable extraction of the contact base resistance and inductance, collector and emitter inductances is possible. A new test to verify measured data or model validity using passive circuit techniques is also described

Keywords

electric impedance measurement; heterojunction bipolar transistors; semiconductor device measurement; HBT series parasitics; active bias conditions; collector inductance; contact base inductance; contact base resistance; emitter inductance; heterojunction bipolar transistors; high base current densities; passive circuit techniques; series access impedances; Capacitance measurement; Circuit testing; Current density; Current measurement; Data mining; Density measurement; Electrical resistance measurement; Heterojunction bipolar transistors; Impedance measurement; Passive circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281226

Filename

4058060