• DocumentCode
    3165526
  • Title

    Fabrication of nano electron source using beam assisted process

  • Author

    Murakami, K. ; Jarupoonphol, W. ; Sakata, K. ; Takai, M.

  • Author_Institution
    Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Japan
  • fYear
    2002
  • fDate
    6-8 Nov. 2002
  • Firstpage
    194
  • Lastpage
    195
  • Abstract
    Fabrication of a field emission electron source is a basic technology for vacuum micro electronics. There are various types of field emitter such as Spindt-type, Si-type, etc. Most of the electron sources have been fabricated using semiconductor process. In this study, a nano electron source has been fabricated using beam-assisted maskless processes. These processes use physical and chemical, reactions by electron beam (EB) or focused ion beam (FIB) with a Ga liquid metal ion source, moreover, a gate diameter and an emitter height can freely be fabricated using these processes.
  • Keywords
    electron beam applications; electron field emission; electron sources; focused ion beam technology; nanotechnology; vacuum microelectronics; Ga liquid metal ion source; beam-assisted maskless process; electron beam; fabrication process; field emission electron source; focused ion beam; nano electron source; vacuum microelectronics; Atmosphere; Atmospheric measurements; Chemical technology; Electron beams; Electron sources; Fabrication; Insulation; Materials science and technology; Vacuum technology; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-031-3
  • Type

    conf

  • DOI
    10.1109/IMNC.2002.1178610
  • Filename
    1178610