DocumentCode
3165526
Title
Fabrication of nano electron source using beam assisted process
Author
Murakami, K. ; Jarupoonphol, W. ; Sakata, K. ; Takai, M.
Author_Institution
Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
194
Lastpage
195
Abstract
Fabrication of a field emission electron source is a basic technology for vacuum micro electronics. There are various types of field emitter such as Spindt-type, Si-type, etc. Most of the electron sources have been fabricated using semiconductor process. In this study, a nano electron source has been fabricated using beam-assisted maskless processes. These processes use physical and chemical, reactions by electron beam (EB) or focused ion beam (FIB) with a Ga liquid metal ion source, moreover, a gate diameter and an emitter height can freely be fabricated using these processes.
Keywords
electron beam applications; electron field emission; electron sources; focused ion beam technology; nanotechnology; vacuum microelectronics; Ga liquid metal ion source; beam-assisted maskless process; electron beam; fabrication process; field emission electron source; focused ion beam; nano electron source; vacuum microelectronics; Atmosphere; Atmospheric measurements; Chemical technology; Electron beams; Electron sources; Fabrication; Insulation; Materials science and technology; Vacuum technology; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178610
Filename
1178610
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