Novel Instability-Probing Simulation for Power Amplifiers

Author

Mizuno, Shinya ; Naito, Kohei ; Tateno, Yasunori ; Sano, Seigo ; Tokumitsu, Tsuneo

Author_Institution

Eudyna Devices Inc., Yamanashi

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1284

Lastpage

1287

Abstract

A novel instability-probing simulation for power amplifiers is presented. Instabilities of power amplifiers with use of very-high performance pHEMT should be observed from a single-gate pHEMT among the multi-gate configuration of the pHEMT, where the power amplifiers are not yet symmetric. A conventional orthogonal (even- and odd-) mode analysis, based on the symmetric power combining, is not complete to predict various instabilities in the power amplifiers. This paper demonstrates a novel instability-probing simulation method that incorporates an ideal transformer. The proposed method successfully predicted microwave and millimeter-wave spurious oscillations observed for a Ku-band MMIC power amplifier

Keywords

HEMT integrated circuits; MMIC power amplifiers; Ku-band; MMIC power amplifier; high electron mobility transistors; instability probing; orthogonal mode analysis; power combining; Circuits; Impedance; MMICs; Microwave amplifiers; Microwave devices; Microwave theory and techniques; PHEMTs; Power amplifiers; Radio frequency; Reflection; multi-gate pHEMT; power amplifiers; probing; spurious oscillation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281231

Filename

4058065