DocumentCode :
316564
Title :
Tunneling emission from valence band of Si-MOS electron tunneling cathode
Author :
Ikeda, J. ; Yamada, Akimasa ; Okamoto, K.
Author_Institution :
R&D Headquarters, Nikon Corporation
fYear :
1997
fDate :
17-21 Aug. 1997
Firstpage :
593
Lastpage :
597
Keywords :
Cathodes; Diodes; Electric variables measurement; Electron emission; Metal-insulator structures; Microelectronics; Research and development; Scattering; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
Type :
conf
DOI :
10.1109/IVMC.1997.627657
Filename :
627657
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=316564
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