PMMA direct patterning by synchrotron radiation using SOG mask

Author

Taniguchi, J. ; Takezawa, S. ; Kanda, K. ; Haruyama, Y. ; Matsui, S. ; Miyamoto, I.

Author_Institution

Dept. of Appl. Electron., Tokyo Univ. of Sci., Chiba, Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

214

Abstract

We found that Spin-On-Glass (SOG) material acts as positive-type electron beam resist, and 200 nm line pattern was obtained using 100 nm beam diameter electron beam exposure and following buffered HF (BHF) development. Our previous report, (Jpn. J. Appl. Phys., vol.41, p.4304-4306, (2002)), direct etching of SOG by synchrotron radiation (SR) was confirmed, however, etching rate of polymethylmethacrylate (PMMA) was much higher than that of SOG. Therefore, SOG is the candidate material for high aspect ratio and fine pattern mask to organic materials such as PMMA by SR exposure. In this report; etching of PMMA by SR using SOG mask was examined.

Keywords

electron resists; polymer films; scanning electron microscopy; spin coating; 100 nm; 200 nm; 400 nm; PMMA direct patterning; Spin-On-Glass mask; synchrotron radiation; Electron beams; Electronics industry; Etching; Industrial electronics; Laboratories; Materials science and technology; Organic materials; Resists; Strontium; Synchrotron radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178620

Filename

1178620