Fabrication of hyperabrupt GaAs varactor diode for W-band waveguide VCO

Author

Choi, Seok-Gyu ; Baek, Yong-Hyun ; Park, Sun-Woo ; Hong, Seung-Hyun ; Baek, Tae-Jong ; Han, Min ; Ko, Dong-Sik ; Kim, Mi-Ra ; Rhee, Jin-Koo

Author_Institution

Millimeter-wave Innovation Technol. Res. Center (MINT), Dongguk Univ., Seoul, South Korea

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1691

Lastpage

1694

Abstract

In this work, we fabricated a hyperabrupt varactor diode and W-band waveguide VCO using fabricated varactor diode. With the anode diameter of 90 Â¿m, a maximum reverse breakdown voltage of 40 V at a leakage current of 30 Â¿A, a maximum capacitance of 5.82 pF, and a minimum capacitance of 0.7 pF were obtained, resulting in a C_max/C_min ratio of 8.31. Fabricated VCO showed an excellent linearity of 1.6 % within 800 MHz. The bandwidth of the VCO was 1.165 GHz from 93.305 GHz to 94.47 GHz, and the output power was from 14.6 dBm to 15.42 dBm.

Keywords

III-V semiconductors; UHF oscillators; gallium arsenide; microwave oscillators; millimetre wave oscillators; varactors; voltage-controlled oscillators; waveguides; GaAs; W-band waveguide VCO; anode diameter; bandwidth; bandwidth 1.165 GHz to 94.47 GHz; capacitance; capacitance 0.7 pF; capacitance 5.82 pF; current 30 muA; hyperabrupt varactor diode; leakage current; linearity; output power; reverse breakdown voltage; size 90 mum; voltage 40 V; voltage controlled oscillators; Anodes; Bandwidth; Capacitance; Diodes; Gallium arsenide; Leakage current; Linearity; Optical device fabrication; Varactors; Voltage-controlled oscillators; Millimeter wave devices; Varactors; Voltage controlled oscillators (VCOs);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384303

Filename

5384303