Title :
Temporal control of radicals for high crystallinity of microcrystalline silicon films in UHF SiH/sub 4//H/sub 2/ pulse-modulated plasma CVD
Author :
Matsutani, M. ; Hori, N. ; Hori, M. ; Goto, T. ; Tsukada, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
In this study, we have investigated the relation between the crystallinity of microcrystalline silicon (/spl mu/c-Si) films and the reaction kinetics of radicals in pulse-modulated plasma CVD employing technique of temporal radical control.
Keywords :
elemental semiconductors; free radical reactions; plasma CVD; reaction kinetics; semiconductor growth; semiconductor thin films; silicon; Si; UHF SiH/sub 4//H/sub 2/ pulse-modulated plasma CVD; crystallinity; microcrystalline silicon thin film; reaction kinetics; temporal radical control; Crystallization; Hydrogen; Plasma density; Plasma temperature; Plasma waves; Semiconductor films; Silicon; Sputtering; Substrates; Thin film transistors;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178625
