High PAE and low intermodulation distortion performance of newly developed GaAs FETs using ion implantation process

Author

Takagi, Kazutaka ; Kimura, Hideki ; Ohmori, Tomohito ; Yamamura, Takuji

Author_Institution

Microwave Solid-state Eng. Dept, Toshiba Corp., Kawasaki, Japan

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1679

Lastpage

1682

Abstract

Ion-implantation GaAs MESFETs were improved for Ku-band applications. Over 20% of the power added efficiency (PAE) was achieved at -25 dBc of third order of intermodulation distortion ratio (IM3) at 14.5 GHz. In order to achieve high PAE and low IM3, the carrier profile was designed by using ion-implantations and the transconductance (gm) along the load-line was measured. This PAE was 5% higher than conventional MESFET, HFET and pHEMT.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; intermodulation distortion; ion implantation; microwave field effect transistors; IM3; MESFETs; PAE; carrier profile; frequency 14.5 GHz; intermodulation distortion ratio third order; ion implantation; load-line; power added efficiency; transconductance; Distortion measurement; FETs; Gallium arsenide; HEMTs; Intermodulation distortion; Ion implantation; MESFETs; MODFETs; PHEMTs; Transconductance; GaAs; IM3; Ion-implantation; MESFET; PAE;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384312

Filename

5384312