• DocumentCode
    3166038
  • Title

    MEMS IC concept for Reconfigurable Low Noise Amplifier

  • Author

    Busquere, J.P. ; Grenier, K. ; Dubuc, D. ; Fourn, E. ; Ancey, P. ; Plana, R.

  • Author_Institution
    LAAS-CNRS, Univ. de Toulouse
  • fYear
    2006
  • fDate
    10-15 Sept. 2006
  • Firstpage
    1358
  • Lastpage
    1361
  • Abstract
    This paper investigates the MEMS IC concept for reconfigurable Low noise amplifier. A dual band demonstrator has been chosen and obtained through a very compact architecture that uses a MEMS network and a SiGe LNA. The system features gain larger than 11 dB and noise figure lower than 2.5dB. The concept has been validated on a first prototype, where a bond wire process has been used. Next generation will use an hybrid above IC method
  • Keywords
    Ge-Si alloys; low noise amplifiers; micromechanical devices; RF MEMS; SiGe; above IC; low noise amplifier; reconfigurability; varactors; Bonding; Dual band; Germanium silicon alloys; Integrated circuit noise; Low-noise amplifiers; Micromechanical devices; Noise figure; Prototypes; Silicon germanium; Wire; Above IC; Low Noise Amplifier; RF MEMS; Reconfigurability; SiGe; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2006. 36th European
  • Conference_Location
    Manchester
  • Print_ISBN
    2-9600551-6-0
  • Type

    conf

  • DOI
    10.1109/EUMC.2006.281269
  • Filename
    4058085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3166038