DocumentCode :
316610
Title :
Encapsulated tapered active layer 1.3 μm Fabry-Perot laser operating at high temperature
Author :
Lestra, A. ; Aubert, P. ; Colson, V. ; Gentner, J.L. ; Grard, E. ; Lafragette, J.L. ; Le Gouezigou, L. ; Pinquier, A. ; Roux, L. ; Toullier, D. ; Tregoat, D. ; Fernier, B.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Volume :
1
fYear :
1997
fDate :
22-25 Sep 1997
Firstpage :
38
Abstract :
High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that the components are fully compatible with non-sealed low-cost packaging
Keywords :
semiconductor device packaging; μm Fabry-Perot laser; 1.3 mum; MQW lasers; encapsulated tapered active layer; high temperature; multiquantum well lasers; optical transmitters;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location :
Edinburgh
ISSN :
0537-9989
Print_ISBN :
0-85296-697-0
Type :
conf
DOI :
10.1049/cp:19971360
Filename :
627791
Link To Document :
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