Title :
A Ka-band monolithic single-chip transceiver using sub-harmonic mixer
Author :
Yon-Lin Kok ; Ahmadi, M. ; Huei Wang ; Allen, B.R. ; Lin, T.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
This paper presents development of a Ka-band (38 GHz) single-chip transceiver based on GaAs HEMT MMIC technology. The transceiver chip utilizes a sub-harmonic mixer in receiving chain such that LO-to-RF port isolation can be improved by more than 20 dB without sacrificing chip compactness. In addition the DC power consumption can be reduced to about one-half of the conventional transceiver with a direct mixer receiver. To date this single-chip transceiver chip has demonstrated a measured LO-to-RF input port isolation of 62 dB, LO-to-RF transmitter port isolation of 52 dB and a power consumption of 1.0 and 3.4 watt in receive and transmit modes respectively. The receiver noise figure achieves 9 dB across the RF band from 38.0 to 38.6 GHz with an IF of 2.38 GHz under 4 dBm LO drive. The conversion gain was measured to be greater than 17 dB.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; gallium arsenide; millimetre wave mixers; transceivers; 1 W; 2.38 GHz; 3.4 W; 38 to 38.6 GHz; DC power consumption reduction; EHF; GaAs; GaAs HEMT MIMIC technology; Ka-band; LO-to-RF port isolation; MM-wave IC; monolithic single-chip transceiver; subharmonic mixer; Energy consumption; Gallium arsenide; HEMTs; Isolation technology; MMICs; Noise figure; Power measurement; Semiconductor device measurement; Transceivers; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689381