• DocumentCode
    316623
  • Title

    Excellent high-temperature characteristics for 1.3 μm-strained MQW ASM-DC-PBH LDs fabricated by pulse-mode selective MOVPE

  • Author

    Sakata, Y. ; Hosoda, T. ; Sasaki, Y. ; Inomoto, Y.

  • Author_Institution
    ULSI Device Dev. Labs., NEC Corp., Shiga, Japan
  • Volume
    1
  • fYear
    1997
  • fDate
    22-25 Sep 1997
  • Firstpage
    99
  • Abstract
    LDs (L=300 μm, 30%-90%) that were all selective MOVPE (ASM) grown with a characteristically low threshold (1th=12 mA, 18 mA) and high efficiency (ηs=0.37 W/A, 0.33 W/A) were produced at high temperature (85°C, 100°C). A low operation current was achieved of 56 mA, 74 mA for 15 mW (@85°C, 100°C), the lowest ever reported for 300 μm-cavity InGaAsP-MQW LDs
  • Keywords
    indium compounds; 100 C; 12 mA; 15 mW; 18 mA; 300 mum; 56 mA; 74 mA; 85 C; InGaAsP; InGaAsP-MQW LDs; all selective MOVPE; excellent high-temperature characteristic; high efficiency; high temperature; low operation current; low threshold; pulse mode heterostructure; pulse-mode selective MOVPE; strained MQW ASM-DC-PBH LDs;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
  • Conference_Location
    Edinburgh
  • ISSN
    0537-9989
  • Print_ISBN
    0-85296-697-0
  • Type

    conf

  • DOI
    10.1049/cp:19971376
  • Filename
    627807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=316623