Title :
Dependence of outgassing characters at 157 nm on resist structures
Author :
Matsui, Y. ; Umeda, S. ; Seki, S. ; Tagawa, S. ; Ishikawa, S. ; Itani, T.
Author_Institution :
Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
The authors examined the dependence of outgassing characteristics at 157 nm exposure against the position of alicyclic compounds and fluorine in the resist base polymers of ArF and F/sub 2/ resists, using in-situ quadrupole mass spectrometry. The dependence of the total amount of outgassed species against the polymer structures are also investigated.
Keywords :
argon compounds; fluorine; mass spectroscopy; nanolithography; outgassing; photolithography; photoresists; polymer films; 157 nm; 157 nm exposure; ArF; ArF resist; F/sub 2/; F/sub 2/ resist; alicyclic compounds; in-situ quadrupole mass spectrometry; outgassing characteristics; polymer structure; resist base polymers; resist structure; Character generation; Conductors; Contamination; Mass spectroscopy; Niobium; Particle beam optics; Polymers; Resists; Sociotechnical systems; Spine;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178644
