A novel self-biased low noise amplifier with current-reused technique for X band applications

A low-noise amplifier (LNA) employing novel self-biased shunt-feedback mechanism for X band applications is presented. The shunt-shunt feedback impedance is not only used to eliminate the use of gate-biased voltage, but also neutralize the miller capacitor of the input transistor. With combining current-reused technique into the amplifier, it is benefit to boost power gain and maintain low power consumption. A source-degeneration inductor is also introduced at the input transistor to ensure good input matching and stability across the required bandwidth. A prototype was fabricated in 0.18-¿m CMOS process to demonstrate the proposed LNA architecture. The measurements show that a maximum power gain of 10 dB, a minimum noise figure (NF) of 4.5 dB, -6 dBm input-referred third-order intercept point (IIP₃), and drawing 7.6 mA from a 1.8-V supply.