DocumentCode
3166319
Title
The effect of gel layer formation during development on CDs
Author
Nakamura, H. ; Takeishi, T. ; Hayasaki, K. ; Ito, S.
Author_Institution
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
270
Lastpage
271
Abstract
As fine patterns with small deviation are required, it is necessary to understand the resist development mechanism in order to control critical dimensions (CDs). When the sequence in which wafer rotation process was added to the static development was applied to line patterns, isolated lines and dense lines differed in their CD change behavior. This phenomenon was investigated from the viewpoint of the gel layer.
Keywords
gels; krypton compounds; nanolithography; photoresists; KrF; KrF resist; centrifugal force; critical dimensions; dense lines; developer penetration; gel layer formation; isolated lines; line patterns; resin dissolution; resist development mechanism; static development; wafer rotation process; wafer rotation speed; Chemicals; Lighting; Manufacturing processes; Resins; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178647
Filename
1178647
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