Title :
Low polarisation sensitivity buried heterostructure electroabsorption modulators for ultra high speed networks
Author :
Moodie, D.G. ; Cannard, P.J. ; Dann, A.J. ; Marcenac, D.D. ; Ford, C.W. ; Reed, J. ; Moore, R.T. ; Lucek, J.K. ; Ellis, A.D.
Author_Institution :
BT Labs., Ipswich, UK
Abstract :
Packaged low polarisation sensitivity InGaAs-InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160 Gbit/s OTDM systems is experimentally assessed
Keywords :
indium compounds; 160 Gbit/s; InGaAs-InAlAs; InGaAs-InAlAs MQW electroabsorption modulator packaging; OTDM systems; TDM systems; buried heterostructure electroabsorption modulators; low polarisation sensitivity; optical waveguides; ridge waveguides; ridged deeply etched buried heterostructure design; ultra high speed networks;
Conference_Titel :
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location :
Edinburgh
Print_ISBN :
0-85296-697-0
DOI :
10.1049/cp:19971394
