Analysis of polarization-independent large field-induced refractive index change without red shift of absorption edge in a strained five-step GaAs-InAlGaAs asymmetric coupled quantum well

Author

Feng, H. ; Pang, J.P. ; Sugiyama, M. ; Tada, K. ; Nakano, Y.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

1

fYear

1997

fDate

22-25 Sep 1997

Firstpage

183

Abstract

A tensile-strained five-step asymmetric coupled quantum well (FACQW) structure is proposed for the first time for large field-induced refractive index change without polarization-dependence and red-shift of absorption edge. The refractive index change of strained FACQW is larger by one order of magnitude compared to that of rectangular quantum well and the difference of the refractive index changes of TE-mode and TM-mode is under 2% when the operation wavelength is apart from absorption edge

Keywords

gallium arsenide; GaAs-InAlGaAs; TE-mode; TM-mode; absorption edge; large field-induced refractive index change; operation wavelength; polarization-dependence; polarization-independent large field-induced refractive index change; rectangular quantum well; refractive index change; refractive index changes; strained FACQW; strained five-step GaAs-InAlGaAs asymmetric coupled quantum well; tensile-strained five-step asymmetric coupled quantum well;

fLanguage

English

Publisher

iet

Conference_Titel

Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)

Conference_Location

Edinburgh

ISSN

0537-9989

Print_ISBN

0-85296-697-0

Type

conf

DOI

10.1049/cp:19971397

Filename

627828